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Ordering number : ENN6783A
2SK2682LS
N-Channel Silicon MOSFET
2SK2682LS
Ultrahigh-Speed Switching Applications
Features
• • •
Package Dimensions
unit : mm 2078C
[2SK2682LS]
10.0 3.2
3.5 7.2
Low ON-resistance. High-speed diode. Micaless package facilitating mounting.
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75 1 2 3
2.4
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 2.55 2.
2SK2682LS Datasheet
