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2SK2909 - N-Channel Silicon MOSFET

Key Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive. Package Dimensions unit:mm 2091A [2SK2909] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Gate 2 : Source 3 : D.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SK2911 N-Channel Silicon MOSFET
2SK2919 N-Channel Silicon MOSFET
2SK2951 N-Channel Silicon MOSFET
2SK2969 N-Channel Silicon MOSFET
2SK2976 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6312 N-Channel Silicon MOSFET 2SK2909 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2091A [2SK2909] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Gate 2 : Source 3 : Drain SANYO : CP 0.8 1.1 Ratings 20 ±10 0.8 3.2 0.