Datasheet4U Logo Datasheet4U.com

2SK937 - N-Channel Junction Silicon FET

Key Features

  • Adoption of FBET process.
  • Large yfs.
  • Small Ciss. Package Dimensions unit:mm 2019B [2SK937] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C 1.3 Conditions Parameter Symbol Conditions Gate-t.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK930 N-Channel JFET ETC
2SK931 N-Channel JFET Sanyo Semiconductor
2SK932 N-Channel JFET ON Semiconductor
2SK934 N-Channel MOSFET Transistor Inchange Semiconductor
2SK935 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SK932 N-Channel JFET
2SK1052 N-Channel Silicon MOSFET
2SK1053 N-Channel Silicon MOSFET
2SK1065 N-Channel Junction Silicon FET
2SK1066 N-Channel Junction Silicon FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN3006 N-Channel Junction Silicon FET 2SK937 High-Frequency General-Purpose Amplifier Applications Features · Adoption of FBET process. · Large yfs. · Small Ciss. Package Dimensions unit:mm 2019B [2SK937] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C 1.