2SK937 Datasheet PDF - Sanyo Semicon Device N-Channel Junction Silicon FET Specs

2SK937 - N-Channel Junction Silicon FET

Datasheet Summary

Features

Adoption of FBET process.
Large yfs.
Small Ciss. Package Dimensions unit:mm 2019B [2SK937] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C 1.3 Conditions Parameter Symbol Conditions Gate-t.

Datasheet Details

Part number	2SK937
Manufacturer	Sanyo Semicon Device
File Size	77.87 KB
Description	N-Channel Junction Silicon FET
Datasheet	2SK937 Datasheet
Additional preview pages of the 2SK937 datasheet.

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Full PDF Text Transcription

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Ordering number:EN3006 N-Channel Junction Silicon FET 2SK937 High-Frequency General-Purpose Amplifier Applications Features · Adoption of FBET process. · Large yfs. · Small Ciss. Package Dimensions unit:mm 2019B [2SK937] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C 1.

Published: Mar 30, 2005 |