Ultrasmall-sized package permitting 2SK1066-
applied sets to be made smaller and slimmer. Package Dimensions
unit:mm 2058
[2SK1066]
0.425
0.3 3
0.15 0 to 0.1
0.2
2.1 1.250
12 0.65 0.65
2.0
0.3 0.6 0.9
0.425
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Sym.
The following content is an automatically extracted verbatim text
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Ordering number:EN2747
N-Channel Junction Silicon FET
2SK1066
High-Frequency General-Purpose Amplifier Applications
Applications
· High-frequency general-purpose amplifier. · AM tuner RF amplifier. · Low-noise amplifier.
Features
· Large yfs. · Small Crss. · Ultralow noise figure. · Ultrasmall-sized package permitting 2SK1066-
applied sets to be made smaller and slimmer.
Package Dimensions
unit:mm 2058
[2SK1066]
0.425
0.3 3
0.15 0 to 0.1
0.2
2.1 1.250
12 0.65 0.65
2.0
0.3 0.6 0.9
0.
2SK1066 Datasheet
