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2SK1068 - N-Channel Junction Silicon FET

Key Features

  • Small IGSS.
  • Small Crss.
  • Ultrasmall-sized package permitting 2SK1068- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1068] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg.

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Ordering number:EN2748 N-Channel Junction Silicon FET 2SK1068 Impedance Conversion Applications Applications · Impedance conversion. · Infrared sensor. Features · Small IGSS. · Small Crss. · Ultrasmall-sized package permitting 2SK1068- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1068] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.