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2SK1065 - N-Channel Junction Silicon FET

Key Features

  • Ultrasmall package facilitates miniaturization in end products.
  • Small Crss (Crss=0.04pF typ). 0.425 Package Dimensions unit:mm 2057A [2SK1065] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 1 : Gate 2 : Drain 3 : Source SANYO : MCP Conditions.

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Part Number Description
2SK1066 N-Channel Junction Silicon FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN2746A N-Channel Junction Silicon FET 2SK1065 High-Frequency General-Purpose Amplifier Applications Features · Ultrasmall package facilitates miniaturization in end products. · Small Crss (Crss=0.04pF typ). 0.425 Package Dimensions unit:mm 2057A [2SK1065] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg 0.425 12 0.65 0.65 2.0 0.3 0.6 0.