Datasheet4U Logo Datasheet4U.com

3LP01C - Ultrahigh-Speed Switching Applications

Key Features

  • Package Dimensions unit : mm 2091A [3LP01C] 0.5 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.4 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 1 : Gate 2 : Source 3 : Drain 0.8 1.1 SANYO : CP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Ts.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
3LP01S P-Channel Small Signal MOSFET ON Semiconductor
3LP01SS P-Channel Small Signal MOSFET ON Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
3LP01M P-Channel Silicon MOSFET
3LP01N P-Channel Silicon MOSFET
3LP01S P-Channel Silicon MOSFET
3LP01SS P-Channel Silicon MOSFET
3LP02C P `lMOS `VRdEgWX^ XCb`Op

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENN6645 3LP01C P-Channel Silicon MOSFET 3LP01C Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2091A [3LP01C] 0.5 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.4 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 1 : Gate 2 : Source 3 : Drain 0.8 1.1 SANYO : CP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -30 ± 10 --0.1 --0.4 0.