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3LP01SS - P-Channel Small Signal MOSFET

Key Features

  • Low ON-resistance.
  • High-speed switching.
  • 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V.
  • ”, so please take care when handling.
  • Machine Model Ratings --3.

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Datasheet Details

Part number 3LP01SS
Manufacturer onsemi
File Size 431.60 KB
Description P-Channel Small Signal MOSFET
Datasheet download datasheet 3LP01SS Datasheet

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Part Number Description
3LP01S P-Channel Small Signal MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN6648B 3LP01SS P-Channel Small Signal MOSFET –30V, –0.1A, 10.4Ω, Single SSFP http://onsemi.com Features • Low ON-resistance • High-speed switching • 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings --30 ±10 --0.1 --0.4 0.15 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.