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3LP01SS - P-Channel Silicon MOSFET

Key Features

  • Package Dimensions unit : mm 2179 [3LP01SS] 1.4 0.3 Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. 0.25 0.1 3 0.8 1.4 0.2 0.3 1 0.45 2 1 : Gate 2 : Source 3 : Drain 0.6 SANYO : SSFP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, dut.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN6648 3LP01SS P-Channel Silicon MOSFET 3LP01SS Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2179 [3LP01SS] 1.4 0.3 Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. 0.25 0.1 3 0.8 1.4 0.2 0.3 1 0.45 2 1 : Gate 2 : Source 3 : Drain 0.6 SANYO : SSFP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -30 ± 10 --0.1 --0.4 0.