3LP01S - P-Channel Small Signal MOSFET

onsemi

Key Features

Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V.
”, so please take care when handling.
Machine Model Rating.

3LP01S p-channel small signal mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	3LP01S
Manufacturer	onsemi
File Size	168.35 KB
Description	P-Channel Small Signal MOSFET
Datasheet	3LP01S Datasheet

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Full PDF Text Transcription (Reference)

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Ordering number : EN6681C 3LP01S P-Channel Small Signal MOSFET –30V, –0.1A, 10.4Ω, Single SMCP http://onsemi.com Features • Low ON-resistance • Ultrahigh-speed switching • 2.5V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings --30 ±10 --0.1 --0.4 0.15 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.