3LP01S - P-Channel Silicon MOSFET

SANYO (now Panasonic)

Key Features

Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive P-Channel Silicon MOSFET General-Purpose Switching Device.

3LP01S p-channel silicon mosfet by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	3LP01S
Manufacturer	SANYO (now Panasonic)
File Size	353.97 KB
Description	P-Channel Silicon MOSFET
Datasheet	3LP01S Datasheet

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Other Datasheets by SANYO (now Panasonic)

Part Number	Description
3LP01SS	P-Channel Silicon MOSFET
3LP01C	Ultrahigh-Speed Switching Applications
3LP01M	P-Channel Silicon MOSFET
3LP01N	P-Channel Silicon MOSFET
3LP02C	P `lMOS `VRdEgWX^ XCb`Op

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN6681B 3LP01S SANYO Semiconductors DATA SHEET 3LP01S Features • Low ON-resistance • Ultrahigh-speed switching • 2.5V drive P-Channel Silicon MOSFET General-Purpose Switching Device Applications Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings --30 ±10 --0.1 --0.4 0.15 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7013A-013 1.6 0.4 0.8 0.