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3LP01M - P-Channel Silicon MOSFET

Key Features

  • Package Dimensions unit : mm 2158 [3LP01M] 0.425 0.3 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.15 3 2.1 1.250 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 0.2 1 : Gate 2 : Source 3 : Drain SANYO : MCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN6139 3LP01M P-Channel Silicon MOSFET 3LP01M Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2158 [3LP01M] 0.425 0.3 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.15 3 2.1 1.250 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 0.2 1 : Gate 2 : Source 3 : Drain SANYO : MCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -30 ± 10 --0.1 --0.4 0.