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3LP02N - Ultrahigh-Speed Switching Applications

Key Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive. Package Dimensions unit:mm 2178 5.0 4.0 [3LP02N] 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1.3 1.3 1 : Source 2 : Dr.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number:ENN6553 P-Channel Silicon MOSFET 3LP02N Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2178 5.0 4.0 [3LP02N] 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1.3 1.3 1 : Source 2 : Drain 3 : Gate SANYO : NP Ratings –30 ±10 –0.2 –0.8 0.