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CPH3110 - PNP/NPN Silicon Epitaxial Planar Transistors

Key Features

  • Adoption of MBIT processes.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm).
  • High allowable power dissipation. ( ) : PNP 0.2 [CPH3110/3210] 2.9 0.4 3 0.15 0.05 0.6 1.6 0.6 2.8 12 1.9 0.7 0.2 0.9 1 : Base 2 : Emitter 3 : Collector Specifications SANYO : CPH3 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6079 PNP/NPN Silicon Epitaxial Planar Transistors CPH3110/3210 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, and strobes. Package Dimensions unit:mm 2150A Features · Adoption of MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). · High allowable power dissipation. ( ) : PNP 0.2 [CPH3110/3210] 2.9 0.4 3 0.15 0.05 0.6 1.6 0.6 2.8 12 1.9 0.7 0.2 0.