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EMH2602 - N-Channel and P-Channel Silicon MOSFETs

Features

  • General-Purpose Switching Device.

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Full PDF Text Transcription

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www.DataSheet4U.com Ordering number : EN8732A EMH2602 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2602 Features • General-Purpose Switching Device Applications • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions N-channel 30 ±20 3.
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