The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet.co.kr
Ordering number : EN9006
EMH2604
SANYO Semiconductors
DATA SHEET
EMH2604
Features
• •
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
• •
Nch + Pch MOSFET ON-resistance Nch : RDS(on)1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.) 1.8V drive Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions N-channel 20 ±10 4 20 1.0 1.