FTS1001 Datasheet PDF - Sanyo Semicon Device Ultrahigh-Speed Switching Applications Specs

FTS1001 - Ultrahigh-Speed Switching Applications

Datasheet Summary

Features

Low ON resistance.
2.5V drive.
Mounting height 1.1mm. Package Dimensions unit:mm 2147A [FTS1001] 0.65 8 5 0.5 0.95 3.0 0.425 1 4 0.25 (0.95) 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 7 : Source 0.125 8 : Drain SANYO : TSSOP8 4.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol.

Datasheet Details

Part number	FTS1001
Manufacturer	Sanyo Semicon Device
File Size	82.68 KB
Description	Ultrahigh-Speed Switching Applications
Datasheet	FTS1001 Datasheet
Additional preview pages of the FTS1001 datasheet.

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Full PDF Text Transcription

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Ordering number:ENN6093A P-Channel Silicon MOSFET FTS1001 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. Package Dimensions unit:mm 2147A [FTS1001] 0.65 8 5 0.5 0.95 3.0 0.425 1 4 0.25 (0.95) 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 7 : Source 0.125 8 : Drain SANYO : TSSOP8 4.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 6.4 Ratings –20 ±10 –4 –20 1.5 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board (1000mm2×0.

Published: Mar 23, 2005 |