FTS1011 Datasheet PDF - Sanyo Semicon Device Ultrahigh-Speed Switching Applications Specs

FTS1011 - Ultrahigh-Speed Switching Applications

Datasheet Summary

Features

Package Dimensions unit : mm 2147A [FTS1011] 0.65 0.95 Low ON-resistance. 2.5V drive. Mounting height 1.1mm. 3.0 0.425 8 5 0.5 4.5 6.4 1 0.25 4 (0.95) 1 : Drain 2 : Source 3 : Source 0.125 4 : Gate 5 : Drain 6 : Source 7 : Source 8 : Drain SANYO : TSSOP8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage.

Datasheet Details

Part number	FTS1011
Manufacturer	Sanyo Semicon Device
File Size	57.58 KB
Description	Ultrahigh-Speed Switching Applications
Datasheet	FTS1011 Datasheet
Additional preview pages of the FTS1011 datasheet.

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www.DataSheet4U.com Ordering number : ENN7003 FTS1011 P-Channel Silicon MOSFET FTS1011 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2147A [FTS1011] 0.65 0.95 Low ON-resistance. 2.5V drive. Mounting height 1.1mm. 3.0 0.425 8 5 0.5 4.5 6.4 1 0.25 4 (0.95) 1 : Drain 2 : Source 3 : Source 0.125 4 : Gate 5 : Drain 6 : Source 7 : Source 8 : Drain SANYO : TSSOP8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.1 1.0 Ratings -20 ± 10 --6 -30 1.

Published: Dec 30, 2006 |