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FW261 - N-Channel Silicon MOSFET

Datasheet Summary

Features

  • Low ON-resistance.
  • 4V drive. N-Channel Silicon MOSFET General-Purpose Switching Device.

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Datasheet Details

Part number FW261
Manufacturer Sanyo Semicon Device
File Size 35.12 KB
Description N-Channel Silicon MOSFET
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Ordering number : EN8749 FW261 FW261 Features • Low ON-resistance. • 4V drive. N-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤100ms) Drain Current (PW≤10µs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg Conditions Duty cycle≤1% Duty cycle≤1% Duty cycle≤1% Mounted on a ceramic board (2000mm2!0.8mm) 1unit, PW≤10s Mounted on a ceramic board (2000mm2!0.8mm), PW≤10s Ratings 30 ±20 5 6 10 20 1.8 2.
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