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FW262 - N-Channel Silicon MOSFET

Datasheet Summary

Features

  • Package Dimensions unit : mm 0000 [FW262] 8 5 0.3 4.4 6.0 Low ON-resistance. 2.5V drive. 5.0 1.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Dr.

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Datasheet Details

Part number FW262
Manufacturer Sanyo Semicon Device
File Size 21.97 KB
Description N-Channel Silicon MOSFET
Datasheet download datasheet FW262 Datasheet
Additional preview pages of the FW262 datasheet.

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Full PDF Text Transcription

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Ordering number : 000000 FW262 N-Channel Silicon MOSFET FW262 Preliminary Features • • Package Dimensions unit : mm 0000 [FW262] 8 5 0.3 4.4 6.0 Low ON-resistance. 2.5V drive. 5.0 1.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Conditions Ratings 30 ±10 9 Unit V V A A W W °C °C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2✕0.8mm) Mounted on a ceramic board (1000mm2✕0.8mm) 52 1.7 2.
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