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PCP1102 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperatu.

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Other Datasheets by SANYO (now Panasonic)

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PCP1101 PNP Epitaxial Planar Silicon Transistor
PCP1103 PNP Epitaxial Planar Silicon Transistor
PCP1104 PNP Epitaxial Planar Silicon Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA1163 PCP1102 SANYO Semiconductors DATA SHEET PCP1102 Applications • PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications DC / DC converters, relay drivers, lamp drivers, motor drivers. Features • • • • • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation.