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PCP1104 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of FBET, MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. High allowable power dissipation. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Tempe.

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Other Datasheets by SANYO (now Panasonic)

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PCP1101 PNP Epitaxial Planar Silicon Transistor
PCP1102 PNP Epitaxial Planar Silicon Transistor
PCP1103 PNP Epitaxial Planar Silicon Transistor
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PCP1202 NPN Epitaxial Planar Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA1347 PCP1104 SANYO Semiconductors DATA SHEET PCP1104 Applications • PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC converters, relay drivers, lamp drivers, motor drivers, IGBT gate drivers. Features • • • • • • Adoption of FBET, MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. High allowable power dissipation. Halogen free compliance.