Sanyo Electric 2SA1787
The 2SA1787/2SC4650 are classified by 10mA hFE as follows : 60 D 120 100 E 200 160 F 320 Ratings min typ (–)200 (–)200 (–)5 max Unit V V V No.3581–2/5 2SA1787/2SC4650 No.3581–3/5 2SA1787/2SC4650 No.3581–4/5 2SA1787/2SC4650 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.| Part No. | 2SA1787 |
|---|---|
| Datasheet | 2SA1787 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP/NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High breakdown voltage : VCEO≥200V.● Small reverse transfer capacitance and excellent high frequency characteristic: Cre=1.2pF (NPN), 1.7pF (PNP).
● Adoption of FBET processes. Package Dimensions unit:mm 2064 [2SA1787/2SC4650] ( ) : 2SA1786 E : Emitter C : Collector B : Base Specifications SANYO : NMP
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol Conditions ICBO IEBO hFE fT Cob VCB=(–)150V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)30V, IC=(–)10mA VCB=(–)30V, f=1MHz Reverse Transfer Capacitance Cre VCB=(–)30V, f=1MHz Collector-to-Emitter Saturation Voltage Ba...
