Sanyo Electric 2SC3645
PNP/NPN Epitaxial Planar Silicon Transistors
| Part No. | 2SC3645 |
|---|---|
| Datasheet | 2SC3645 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP/NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Adoption of FBET process.● High breakdown voltage (VCEO=160V).
● Excellent linearity of hFE and small Cob.
● Fast switching speed.
● Ultrasmall size marking it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1415/2SC3645] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1415 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC1 PC2 Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C 0.4 0.5 32 1.5 3.0 1 0.75 Conditions Moutned on ceramic board (250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)80V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)5V, IC=(–)10mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)10mA * : The 2SA1415/2SC3645 are classified by 10mA...
