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2SC3645 Datasheet PDF

onsemi 2SC3645

PNP / NPN Epitaxial Planar Silicon Transistors

Part No. 2SC3645
Datasheet 2SC3645 Download
Manufacturer
onsemi
Description PNP / NPN Epitaxial Planar Silicon Transistors
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2SC3645 datasheet page 1 preview

APPLICATIONS

FEATURES

● Adoption of FBET process.
● High breakdown voltage (VCEO=160V).
● Excellent linearity of hFE and small Cob.
● Fast switching speed.
● Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs. Specifications ( ) : 2SA1415

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Marking : 2SA1415 : AA, 2SC3645: CA Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Moutned on ceramic board (250mm2✕0.8mm) Ratings (--)180 (--)160 (--)5 (--)140 (--)200 500 1.3 150 --55 to +150 Unit V V V mA mA mW W °C °C © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Rev.0 I Pwagwew1.oofn5seImwiw.cwo.omnsemi.com Publication Order Number: 2SA1415_2SC3645/D 2SA1415 / 2SC3645

ELECTRICAL CHARACTERISTICS

at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain G...
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