Sanyo Electric 2SC3649
PNP/NPN Epitaxial Planar Silicon Transistors
| Part No. | 2SC3649 |
|---|---|
| Datasheet | 2SC3649 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP/NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Adoption of FBET, MBIT processes.● High breakdown voltage and large current capacity.
● Ultrasmall size making it easy to provide high- density hybrid ICs. Package Dimensions unit:mm 2038A [2SA1419/2SC3649] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1419 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Moutned on ceramic board (250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)120V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE1 hFE2 VCE=(–)5V, IC=(–)100mA VCE=(–)5V, IC=(–)10mA * : The 2SA1419/2SC3649 are classified by 100mA hFE as follows : Rank R S T h...
