onsemi 2SC3649
Bipolar Transistor
| Part No. | 2SC3649 |
|---|---|
| Datasheet | 2SC3649 Download |
| Manufacturer |  onsemi |
| Description | Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
● Adoption of FBET, MBIT Processes● High Breakdown Voltage and Large Current Capacity
● Ultrasmall Size Making it Easy to Provide High−density, Small−sized Hybrid IC’s Specifications ( ): 2SA1419
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Symbol Parameter Conditions Ratings Unit VCBO Collector−to−Base Voltage − (−)180 V VCEO Collector−to−Emitter Voltage − (−)160 V VEBO IC ICP PC Emitter−to−Base Voltage − (−)6 V Collector Current − (−)1.5 A Collector Current (Pulse) − (−)2.5 A Collector Dissipation − 500 mW When mounted on 1.5 W ceramic substrate (250 mm2 x 0.8 mm) Tj Junction Temperature − 150 °C Tstg Storage Temperature − −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CONNECTIONS 2 2 1 1 3 2SA1419 3 2SC3649 MARKING DIAGRAMS AE LOT No. CE LOT No. RANK RANK 2SA1419 2SC3649 AE/CE = Specific De...
