Sanyo Electric 2SC4168
PNP/NPN Epitaxial Planar Silicon Transistors
FEATURES
● Fast switching speed.● High gain-bandwidth product.
● Low saturation voltage. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching
APPLICATIONS
Package Dimensions unit:mm 2018A [2SA1607/2SC4168] ( ) : 2SA1607 SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol Conditions ICBO IEBO hFE VCB=(–)30V, IE=0 VEB=(–)4V, IC=0 VCE=(–)1V, IC=(–)10mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)10mA C : Collector B : Base E : Emitter SANYO : CP Ratings (–)40 (–)20 (–)5 (–)150 (–)300 (–)30 200 150 –55 to +150 Unit V V V mA mA mA mW ˚C ˚C Ratings min typ 60* 700 (400) max (–)0.1 (–)0.1 270* (180) Unit µA µA MHz MHz Continued on next page.