Sanyo Electric 2SC4433
The 2SC4433 is classified by 5mA hFE as follows : 60 D 120 100 E 200 160 F 320 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings 40 18 3 50 300 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ 60* 750 1.0 0.65 26 max 0.1 0.1 320* 1.5 0.2 25 Unit µA µA MHz pF pF V ps dB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical...| Part No. | 2SC4433 |
|---|---|
| Datasheet | 2SC4433 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High power gain : PG=28dB typ (f=100MHz).● High cutoff frequency : fT=750MHz typ.
● Small Cob, Cre. Package Dimensions unit:mm 2033A [2SC4433] 4.0 2.2 0.6 1.8 15.0 3.0 0.4 0.5 0.4 0.4 123 1.3 1.3 0.7 0.7 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 3.0 3.8 ConditionsELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=18V, IE=0 Emitter Cutoff Current IEBO VEB=2V, IC=0 DC Current Gain hFE VCE=10V, IC=5mA Gain-Bandwidth Product fT VCE=10V, IC=5mA Output Capacitance Cob VCB=10V, f=1MHz Reverse transfer Capacitance Cre VCB=10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA Base-to-Collector Time Constant rbb'Cc VCE=10V, IC=5mA, f=31.9MHz Power Gain PG VCE=10V, IC=10mA, f=100MHz *...
