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2SC4435 Datasheet PDF

Sanyo Electric 2SC4435

NPN Triple Diffused Planar Silicon Transistor

Part No. 2SC4435
Datasheet 2SC4435 Download
Manufacturer
Sanyo Electric
Description NPN Triple Diffused Planar Silicon Transistor
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2SC4435 datasheet page 1 preview

APPLICATIONS

FEATURES

● Fast switching speed (tf=300ns max).
● High brocking voltage (VCBO=1500V).
● High reliability (Adoption of HVP process).
● Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC4435] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C 1.6 2.0 1.0 12 0.6 3 1.4 5.45 5.45 Conditions 20.0 1.4 0.6 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Ratings 1500 800 7 5 16 2.5 100 150 –55 to +150 Unit V V V A A W W ˚C ˚C

ELECTRICAL CHARACTERISTICS

at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO ICES VCEO(sus) IEBO VCE(...
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