Sanyo Electric 2SC4435
NPN Triple Diffused Planar Silicon Transistor
APPLICATIONS
FEATURES
● Fast switching speed (tf=300ns max).● High brocking voltage (VCBO=1500V).
● High reliability (Adoption of HVP process).
● Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC4435] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C 1.6 2.0 1.0 12 0.6 3 1.4 5.45 5.45 Conditions 20.0 1.4 0.6 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Ratings 1500 800 7 5 16 2.5 100 150 –55 to +150 Unit V V V A A W W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO ICES VCEO(sus) IEBO VCE(...