Sanyo Electric 2SC5451
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SC5451 |
|---|---|
| Datasheet | 2SC5451 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High speed.● High breakdown voltage (VCBO=1600V).
● High reliability (Adoption of HVP process).
● Adoption of MBIT process. a t a S h e e t 4 U . c o m Package Dimensions unit:mm 2039D [2SC5451] 3.4 16.0 5.6 3.1 w w w . D 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 5.45 Conditions 3.5 5.45 Ratings 1600 800 6 15 35 3 75 150 –55 to +150 2.0 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Unit V V V A A W W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain Symbol ICES VCE=1600V, RBE=0 VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 ICBO...
