Sanyo Electric 2SC5452
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SC5452 |
|---|---|
| Datasheet | 2SC5452 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High speed.● High breakdown voltage (VCBO=1600V).
● High reliability (Adoption of HVP process).
● Adoption of MBIT process. a t a S h e e t 4 U . c o m Package Dimensions unit:mm 2039D [2SC5452] 3.4 16.0 5.0 8.0 5.6 3.1 w w w . D 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Conditions Ratings 1600 800 6 20 40 3 75 150 –55 to +150 2.0 Unit V V V A A W W ˚C ˚C Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain Symbol ICES VCE=1600V, RBE=0 VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 ICBO VCB=800V, IE=0 hFE1 hFE2 VCE=5V, IC=1A VCE=5V, IC=14A Conditions Ratings min 800 1.0 10 15 4 30 7 typ max 1.0 Unit mA V mA µA Continued on next page.
