Sanyo Electric 2SC5453
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SC5453 |
|---|---|
| Datasheet | 2SC5453 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High speed.● High breakdown voltage (VCBO=1600V).
● High reliability (Adoption of HVP process).
● Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5453] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 5.45 5.45 Conditions 2.8 1 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Ratings 1600 800 6 25 50 3.5 210 150 –55 to +150 Unit V V V A A W W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain Symbol ICES VCE=1600V, RBE=0 VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 ICBO VCB=800V, IE=0 hFE1 hFE2 VCE=5V, IC=1.0A VCE=5V, IC=18A Conditions Ratings min 800 1.0 10 15 4 30 7 typ max 1.0 Unit mA V mA µA Continued on next page.
