Sanyo Electric 2SD1913
PNP/NPN Epitaxial Planar Silicon Transistors
| Part No. | 2SD1913 |
|---|---|
| Datasheet | 2SD1913 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP/NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
APPLICATIONS
● Package Dimensions unit : mm 2041A [2SB1274/2SD1913] 4.5 2.8 3.5 7.2 16.0 18.1 General power amplifier.FEATURES
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● 10.0 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting. 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 Specifications ( ):2SB1274
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML 2.55 2.55 Conditions Ratings (−)60 (−)60 (−)6 (−)3 (−)8 2 20 150 −55 to +150 Unit V V V A A W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 Ratings min typ max (-)100 (-)100 Unit µA µA Continued on next page.
