Sanyo Electric CPH3304
P-Channel Silicon MOSFET
APPLICATIONS
FEATURES
● Low ON resistance.● Ultrahigh-speed switching.
● 4V drive. Package Dimensions unit:mm 2152 [CPH3304] 2.9 0.4 0.6 0.2 0.15 3 0 to 0.1 1.6 2.8 1 1.9 2 0.2 0.6 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm) Conditions 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Ratings –30 ±20 –1.6 –6.4 1.0 150 –55 to +150 Unit V V A A W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss...