Sanyo Electric CPH3308
P-Channel Silicon MOSFET
| Part No. | CPH3308 |
|---|---|
| Datasheet | CPH3308 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● Package Dimensions unit : mm 2152A [CPH3308] 2.9 0.4 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.2 Ratings --30 ± 20 --4 --16 1.2 150 --55 to +150 0.2 Unit V V A A W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=-1mA, VGS=0 VDS=--30V, VGS=0 VGS=± 16V, VDS=0 VDS=--10V,...
