Sanyo Electric CPH3306
P-Channel Silicon MOSFET
APPLICATIONS
FEATURES
● Low ON resistance.● Ultrahigh-speed switching.
● 4V drive. Package Dimensions unit:mm 2152A [CPH3306] 0.4 3 0.6 0.05 1 1.9 2 0.2 0.6 1.6 2.8 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm) Conditions Ratings –60 ±20 –1 –4 1 150 –55 to +150 Unit V V A A W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=–1mA, VGS=0 VDS=–60V,...