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CPH3306 Datasheet PDF

Sanyo Electric CPH3306

P-Channel Silicon MOSFET

Part No. CPH3306
Datasheet CPH3306 Download
Manufacturer
Sanyo Electric
Description P-Channel Silicon MOSFET
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CPH3306 datasheet page 1 preview

APPLICATIONS

FEATURES

● Low ON resistance.
● Ultrahigh-speed switching.
● 4V drive. Package Dimensions unit:mm 2152A [CPH3306] 0.4 3 0.6 0.05 1 1.9 2 0.2 0.6 1.6 2.8 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm) Conditions Ratings –60 ±20 –1 –4 1 150 –55 to +150 Unit V V A A W ˚C ˚C

ELECTRICAL CHARACTERISTICS

at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=–1mA, VGS=0 VDS=–60V,...
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