• Part: D1064
  • Description: PNP/NPN Epitaxial Planar Silicon Tranasistors
  • Manufacturer: SANYO
  • Size: 102.42 KB
Download D1064 Datasheet PDF
SANYO
D1064
Features - Low-saturation collector-to-emitter voltage : VCE(sat)=- 0.5V(PNP), 0.4V(NPN) max. - Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2022A [2SB828/2SD1064] ( ) : 2SB828 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage ICBO IEBO h FE1 h FE2 f T VCE(sat) VCB=(- )40V, IE=0 VEB=(- )4V, IC=0 VCE=(- )2V, IC=(- )1A VCE=(- )2V, IC=(- )5A VCE=(- )5V, IC=(- )1A IC=(- )6A, IB=(- )0.3A - : The 2SB828/2SD1064 are classified by 1A h FE as follows : 70 Q 140 100 R 200 140 S 280 1 ; Base 2 : Collector 3 :...