Sanyo Electric FW111
P-Channel Silicon MOSFET
FEATURES
● 2.5V drive.● Low ON resistance. P-Channel Silicon MOSFET FW111 Load S/W
APPLICATIONS
Package Dimensions unit:mm 2129 [FW111] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD PT Tch TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C 0.595 1.27 0.43 Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=–1mA, VGS=0 VDS=–2...