Sanyo Electric FW115
P-Channel Silicon MOS FET
| Part No. | FW115 |
|---|---|
| Datasheet | FW115 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOS FET |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● 4V drive.● Low ON resistance. Package Dimensions unit:mm 2129 [FW115] 8 5 0.3 5.0 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.5 1.8max 1 4 0.2 1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SOP8 4.4 Conditions Ratings –30 ±20 –3 6.0 Unit V V A A W W ˚C ˚C PW≤10µs, duty cycle≤1% Mounted on ceramic board (1200mm2×0.8mm) 1unit Mounted on ceramic board (1200mm2×0.8mm) –32 1.7 2.0 150 –55 to +150ELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter D-S Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Current Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON...
