Sanyo Electric FW113
P-Channel Silicon MOS FET
| Part No. | FW113 |
|---|---|
| Datasheet | FW113 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOS FET |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● 4V drive.● Low ON resistance. Package Dimensions unit:mm 2129 [FW113] 85 0.1 1.5 1.8max 4.4 0.3 6.0 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C 1 5.0 4 0.595 1.27 0.43 1:Source1 2:Gate1 3:Source2 4:Gate2 0.2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SOP8 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on ceramic board (1000mm2×0.8mm) 1unit Mounted on ceramic board (1000mm2×0.8mm) Ratings –30 ±20 –5 –32 1.7 2.0 150 –55 to +150 Unit V V A A W W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter D-S Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Current Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON D...
