LC3564RM Overview
They are fully CMOS devices employing 2-layer A1 wiring to realize high-speed access, low operating current consumption and very low standby current. They incorporate control signal inputs; OE for high-speed memory access, and 2 chip enables CE1 and CE2 for power-down and device selection.
LC3564RM Key Features
- 3V operation: 2.7 to 3.6V
- Battery operation: 2.0 to 2.4V
- 3V operation
- LC3564RM,RT-10LV: 100ns (max)
- LC3564RM,RT-12LV: 120ns (max)
- LC3564RM,RT-15LV: 150ns (max)
- Battery operation
- LC3564RM,RT-10LV: 200ns (max)
- LC3564RM,RT-12LV: 250ns (max)
- LC3564RM,RT-15LV: 300ns (max)