2SD1621
Overview
- Adoption of FBET, MBIT processes.
- Low collector-to-emitter saturation voltage.
- Large current capacity and wide ASO.
- Fast switching speed.
- Very small size making it easy to provide high- density, small-sized hybrid IC’s. [2SB1121/2SD1621] E : Emitter C : Collector B : Base ( ) : 2SB1121
