2SB1161 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-8A ;IB=-0.8A IC=-8A ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 20 60 20 MIN 2SB1161 SYMBOL VCEsat...