With TO-3PFa package
Complement to type 2SD1716
High fT
Wide area of safe operation APPLICATIONS
For high power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base
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SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1161
DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1716 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -12 -20 120 W UNIT V V V A A
SavantIC Semiconductor
www.DataSheet4U.
2SB1161 Datasheet
