2SB1481
2SB1481 is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-220F package
- plement to type 2SD2241
- High DC current gain.
- Low saturation voltage.
- DARLINGTON APPLICATIONS
- For power amplifier applications PINNING
PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 ±4 ±6 25 W UNIT V V V A A
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=-10m A; IB=0 IC=-3A ; IB=-6m A IC=-3A ; IB=-6m A VCB=-100V;IE=0 VEB=-5V;IC=0 IC=-1.5A ; VCE=-2V IC=-3A ; VCE=-2V IC=1A ; IB=0 2000 1000 MIN -100
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO h FE-1 h FE-2 VECO
TYP.
UNIT V
-1.5 -2.0 -2 -2.5
V V µA m A
V ton tstg tf
Turn-on time Storage time Fall time IB1=-IB2=-6m A VCC@-30V; RL=10A
0.15 0.80 0.40
µs µs µs
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
PACKAGE...
