2SB1481 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A) ·Low Collector Saturation Voltage-.
| Part number | 2SB1481 |
|---|---|
| Datasheet | 2SB1481-INCHANGE.pdf |
| File Size | 206.59 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A) ·Low Collector Saturation Voltage-.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SB1481 | TRANSISTOR | Toshiba Semiconductor | |
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2SB1481 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB1400 | PNP Transistor |
| 2SB1402 | PNP Transistor |
| 2SB1403 | PNP Transistor |
| 2SB1404 | PNP Transistor |
| 2SB1411 | PNP Transistor |
| 2SB1419 | PNP Transistor |
| 2SB1420 | PNP Transistor |
| 2SB1421 | PNP Transistor |
| 2SB1429 | PNP Transistor |
| 2SB1430 | PNP Transistor |