2SB1481 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications 2SB1481 Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = −2 V,

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1481 DESCRIPTION ·With TO-220F package ·Compleme

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 200

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