The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1481
Switching Applications
2SB1481
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−100
V
Collector-emitter voltage
VCEO
−100
V
Emitter-base voltage
VEBO −5 V
Collector current
DC
IC
±4 A
Pulse ICP ±6
Base current
IB
−0.3
A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.0 W
25
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g.
2SB1481 Datasheet
