2SC3047 Overview
Key Specifications
Description
With TO-220C package - High voltage ,high speed switching - High reliability APPLICATIONS - Switching regulators - Ultrasonic generators - High frequency inverters - General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 850 500 10 6 2 40 150 -55~150 UNIT V V V A A W SYMBOL Rth j-C PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=850V ;IE=0 VEB=10V; IC=0 IC=0.5 A ; VCE=5V 15 MIN 500 850 10 2SC3047 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V V 0.5 1.2 1 1 V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=1A; IB1=0.1A IB2=-0.2A;RL=300A 1.0 3.0 1.0 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3047 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3.
