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MJF18004 Datasheet SILICON POWER TRANSISTOR

Manufacturer: SavantIC

Overview: SavantIC Semiconductor Product Specification Silicon NPN Power.

Datasheet Details

Part number MJF18004
Manufacturer SavantIC
File Size 243.91 KB
Description SILICON POWER TRANSISTOR
Download MJF18004 Download (PDF)

General Description

With TO-220F package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION MJF18004 · Fig.1 simplified outline (TO-220F) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 450 9 5 10 2 4 40 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance junction to case Thermal resistance junction to ambient MAX 3.12 62.5 UNIT /W /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A;

L=25mH IC=1A ;IB=0.1A TC=125 IC=2A ;IB=0.4A TC=125 IC=2.5A ;IB=0.5A IC=1A ;IB=0.1A IC=2A ;IB=0.4A IC=2.5A ;IB=0.5A VCES=RatedVCES;

VEB=0 TC=125 VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency Collector outoput capacitance VCE=RatedVCEO;